VLSI Technology

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2 STUDENTS

Introduction – BJT Fabrication – MOSFET Fabrication for IC – Crystal Structure of Si-Defects in Crystal + Crystal growth – Vapour phase Epitaxy – Doping during Epitaxy-Molecular beam Epitaxy – Kinetics of Oxidation – Oxidation rate constants – dopant Redistribution – Oxide Charges – Theory of Diffusion – Infinite Source – Actual Doping Profiles – Diffusion Systems-Ion – Implantation Process-Annealing of Damages – Masking during Implantation – Lithography.

Wet Chemical Etching – Dry Etching – Plasma Etching Systems-Etching of Si,Sio2,SiN and other materials – Plasma Deposition Process-Metalization – Problems in Aluminium Metal contacts – IC BJT – From junction isolation to LOCOS – Problems in LOCOS + Trench isolation – More about BJT Fabrication and Realization – Circuits + Transistors in ECL Circuits – MOSFET I – Metal gate vs Self-aligned Poly-gate,Tailoring of Device Parameters – CMOS Technology – latch – up in CMOS-BICMOS Technology

Course Curriculum

Introduction Details 49:2
BJT Fabrication Details 48:48
MOSFET Fabrication for IC Details 50:13
Crystal Structure of Si Details 50:47
Crystal Structure contd Details 47:57
Defects in Crystal + Crystal growth Details 49:17
Crystal growth Contd + Epitaxy I Details 50:33
Epitaxy II – Vapour phase Epitaxy Details 52:33
Epitaxy III – Doping during Epitaxy Details 43:2
Molecular beam Epitaxy Details 48:22
Oxidation I – Kinetics of Oxidation Details 51:46
Oxidation II Oxidation rate constants Details 51:42
Oxidation III – Dopant Redistribution Details 50:37
Oxidation IV – Oxide Charges Details 44:14
Diffusion I – Theory of Diffusion Details 53:50
Diffusion II – Infinite Source Details 42:53
Diffusion III – Actual Doping Profiles Details 52:10
Diffusion IV Diffusion Systems Details 54:30
Ion – Implantation Process Details 54:54
Ion – Implantation Process Details 51:25
Annealing of Damages Details 51:48
Masking during Implantation Details 53:2
Lithography – I Details 52:43
Lithography – II Details 38:55
Wet Chemical Etching Details 54:10
Dry Etching Details 52:3
Plasma Etching Systems Details 51:59
Etching of Si,Sio2,SiN and other materials Details 52:11
Plasma Deposition Process Details 50:49
Metalization – I Details 50:44
Problems in Aluminium Metal contacts Details 0:49
IC BJT – From junction isolation to LOCOS Details 41:45
Problems in LOCOS + Trench isolation Details 54:34
More about BJT Fabrication and Realization Details 51:4
Circuits + Transistors in ECL Circuits Details 48:4
MOSFET I – Metal gate vs Self-aligned Poly-gate Details 56:36
MOSFET II Tailoring of Device Parameters Details 51:20
CMOS Technology Details 50:6
Latch – up in CMOS Details 40:37
BICMOS Technology Details 44:16

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