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VLSI Technology

IIT Madras, , Prof. Dr. Nandita Dasgupta

Overview

Introduction - BJT Fabrication - MOSFET Fabrication for IC - Crystal Structure of Si-Defects in Crystal + Crystal growth - Vapour phase Epitaxy - Doping during Epitaxy-Molecular beam Epitaxy - Kinetics of Oxidation - Oxidation rate constants - dopant Redistribution - Oxide Charges - Theory of Diffusion - Infinite Source - Actual Doping Profiles - Diffusion Systems-Ion - Implantation Process-Annealing of Damages - Masking during Implantation - Lithography.

Wet Chemical Etching - Dry Etching - Plasma Etching Systems-Etching of Si,Sio2,SiN and other materials - Plasma Deposition Process-Metalization - Problems in Aluminium Metal contacts - IC BJT - From junction isolation to LOCOS - Problems in LOCOS + Trench isolation - More about BJT Fabrication and Realization - Circuits + Transistors in ECL Circuits - MOSFET I - Metal gate vs Self-aligned Poly-gate,Tailoring of Device Parameters - CMOS Technology - latch - up in CMOS-BICMOS Technology

Includes

Lecture 15: Diffusion I - Theory of Diffusion

4.1 ( 11 )


Lecture Details

Ratings

3.0


2 Ratings
55%
30%
10%
3%
2%
Comments
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Sam

Excellent course helped me understand topic that i couldn't while attendinfg my college.

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Dembe

Great course. Thank you very much.

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