VLSI Technology

IIT Madras Course , Prof. Dr. Nandita Dasgupta

152 students enrolled

Overview

Introduction - BJT Fabrication - MOSFET Fabrication for IC - Crystal Structure of Si-Defects in Crystal + Crystal growth - Vapour phase Epitaxy - Doping during Epitaxy-Molecular beam Epitaxy - Kinetics of Oxidation - Oxidation rate constants - dopant Redistribution - Oxide Charges - Theory of Diffusion - Infinite Source - Actual Doping Profiles - Diffusion Systems-Ion - Implantation Process-Annealing of Damages - Masking during Implantation - Lithography.

Wet Chemical Etching - Dry Etching - Plasma Etching Systems-Etching of Si,Sio2,SiN and other materials - Plasma Deposition Process-Metalization - Problems in Aluminium Metal contacts - IC BJT - From junction isolation to LOCOS - Problems in LOCOS + Trench isolation - More about BJT Fabrication and Realization - Circuits + Transistors in ECL Circuits - MOSFET I - Metal gate vs Self-aligned Poly-gate,Tailoring of Device Parameters - CMOS Technology - latch - up in CMOS-BICMOS Technology

Lecture 18: Diffusion IV Diffusion Systems

Up Next
You can skip ad in
SKIP AD >
Advertisement
      • 2x
      • 1.5x
      • 1x
      • 0.5x
      • 0.25x
        EMBED LINK
        COPY
        DIRECT LINK
        PRIVATE CONTENT
        OK
        Enter password to view
        Please enter valid password!
        0:00
        0 (0 Ratings)

        LECTURES



        Review


        0

        0 Rates
        1
        0%
        0
        2
        0%
        0
        3
        0%
        0
        4
        0%
        0
        5
        0%
        0

        Comments Added Successfully!
        Please Enter Comments
        Please Enter CAPTCHA
        Invalid CAPTCHA
        Please Login and Submit Your Comment