High Speed Devices and Circuits

Overview

Introduction to Basic Concepts - Requirements of High Speed Devices, Circuits & Mat - Classifications & Properties of Compound Semicond - Temary Compound Semiconductor and their Application - Temary Compound Semiconductor and their Appl - 2 - Crystal Structures in GaAs - Dopants and impurities in GaAs and InP - Brief Overview of GaAs Technology for High Speed - Epitaxial Techniques for GaAs High Speed Devices - MBE and LPE for GaAs Epitaxy - GaAs and InP Devices for Microelectronics - Metal Semiconductor contacts for MESFET - Ohmic Contacts on Semiconductors - Fermi Level Pinning & Schottky Barrier Diodes - Schottky Barrier Diodes

Causes of Non-Idealities-Schottky Barrier Diodes - MESFET Operation & I-V Characteristics - MESFET I-V Characteristics Shockley's Model - MESFET Shockley's Model and Velocity saturation - MESFET Velocity Saturation effect - MESFET Drain Current Saturation - MESFET : Effects of channel length and gate length on IDS and gm - MESFET: Effects of Velocity Saturation - Velocity Field Characteristics - MESFET-SAINT - SELF Aligned MESFET-SAINT - Hetero Junctions - High Electron Mobility Transistor - HEMT-off Voltage - HEMT 1-V Characteristics and Transconductance - Indium Phosphide Based HEMT - Pseudomorphic HEMT - Hetrojunction Bipolar Transistors(HBT) - Hetro Junctions and HEMT