Electronic materials, devices, and fabrication

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Introduction to chemical bonding and development of band gap – Introduction and types of semiconductors. Explanation of density of states, Fermi energy, and band occupancy – Problem set on bonding,density of states, and Fermi statistics – Intrinsic semiconductors, carrier concentration, mobility, temperature dependence – Problem set on intrinsic semiconductors – Extrinsic semiconductors. Dopant types and materials. Conductivity, Fermi energy position,temperature dependence – Problem set on extrinsic semiconductors – Metal-semiconductor junctions. Schottky vs. Ohmic junctions. Band gap diagrams. I-V characteristics – Problem set on metal-semiconductor junctions – p-n junctions. Equlibrium and under bias ( forward and reverse). Band diagrams. I-V characteristics. Junction breakdown. Heterojunctions – Problem set on pn junctions – Transistors-BJT,JFET,MOSFET. Transistor action. Basics of BJT and JFET.Channel formation in MOSFET. I-V behavior.Depletion and inversion layer calculation – Problem set on transistors – Optoelectronic materials. Introduction. LEDs,LASERs,photodetectors,solar cells – Problem set on optical properties – Problem set on optoelectronic devices – Introduction to semiconductor manufacturing. History,overview of process flow, manufacturing goals. Scaling – Wafer manufacturing. Si ingot preparation. Poly to single crystal conversion. Czochralski vs. float zone method – IC device manufacturing overview. Thermal oxidation. Doping. Lithography. Etching and growth. Metallization and growth – Process and device evaluation. Yield monitoring and control – Clean room design. Contamination control – Devices and IC formation. IC circuit logic and packaging

Course Curriculum

Mod01 Lec-01 Metals, semiconductors, and insulators Details 41:59
Mod-01 Assignment 1 – Bonding, DOS, and Fermi statistics Details 50:4
Mod-01 Assignment 2 – Intrinsic semiconductors Details 40:25
Introduction to semiconductors Details 41:46
Pn junction breakdown and heterojunctions Details 41:51
Density of states and Fermi-Dirac statistics Details 47:59
Mod-01 Assignment 3 – Extrinsic semiconductors Details 45:12
Intrinsic semiconductors Details 49:27
Mod-01 Assigment 4 – Metal-semiconductor junctions Details 43:14
Mod-01 Lec -05 Intrinsic semiconductors – conductivity Details 44:38
Mod-01 Assignment 5 – pn junctions Details 52:24
Extrinsic semiconductors Details 45:49
Mod-01 Assignment 6 – transistors Details 52:1
Extrinsic semiconductors – Fermi level Details 52:28
Mod-01 Assignment 7 – optical properties Details 46:10
Extrinsic semiconductors – conductivity Details 0:48
Mod-01 Assignment 8 – optoelectronic devices Details 49:31
Metal-semiconductor junctions Details 48:37
Pn junctions in equilibrium Details 47:40
Pn junctions under bias Details 47:18
Transistors Details 46:22
MOSFETs Details 49:30
Optoelectronic devices: Introduction Details 50:6
Optoelectronic devices: LEDs Details 48:10
Optoelectronic devices: LASERs Details 48:36
Optoelectronic devices: photodetector Details 48:7
Optoelectronic devices: solar cells Details 44:41
Semiconductor manufacturing: Introduction Details 46:58
Si wafer manufacturing Details 46:8
IC device manufacturing: overview Details 48:20
Layering: thermal oxidation Details 48:6
Doping: thermal and ion implantation Details 48:10
Lithography Details 48:18
Etching and deposition (growth) Details 48:26
Metallization and polishing Details 50:28
Process and device evaluation Details 53:3
Productivity and process yield Details 49:23
Clean room design and contamination control Details 49:6
Devices and IC formation Details 43:53
IC circuit logic and packaging Details 45:6

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