Introduction to chemical bonding and development of band gap – Introduction and types of semiconductors. Explanation of density of states, Fermi energy, and band occupancy – Problem set on bonding,density of states, and Fermi statistics – Intrinsic semiconductors, carrier concentration, mobility, temperature dependence – Problem set on intrinsic semiconductors – Extrinsic semiconductors. Dopant types and materials. Conductivity, Fermi energy position,temperature dependence – Problem set on extrinsic semiconductors – Metal-semiconductor junctions. Schottky vs. Ohmic junctions. Band gap diagrams. I-V characteristics – Problem set on metal-semiconductor junctions – p-n junctions. Equlibrium and under bias ( forward and reverse). Band diagrams. I-V characteristics. Junction breakdown. Heterojunctions – Problem set on pn junctions – Transistors-BJT,JFET,MOSFET. Transistor action. Basics of BJT and JFET.Channel formation in MOSFET. I-V behavior.Depletion and inversion layer calculation – Problem set on transistors – Optoelectronic materials. Introduction. LEDs,LASERs,photodetectors,solar cells – Problem set on optical properties – Problem set on optoelectronic devices – Introduction to semiconductor manufacturing. History,overview of process flow, manufacturing goals. Scaling – Wafer manufacturing. Si ingot preparation. Poly to single crystal conversion. Czochralski vs. float zone method – IC device manufacturing overview. Thermal oxidation. Doping. Lithography. Etching and growth. Metallization and growth – Process and device evaluation. Yield monitoring and control – Clean room design. Contamination control – Devices and IC formation. IC circuit logic and packaging
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