High Speed Devices and Circuits

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Introduction to Basic Concepts – Requirements of High Speed Devices, Circuits & Mat – Classifications & Properties of Compound Semicond – Temary Compound Semiconductor and their Application – Temary Compound Semiconductor and their Appl – 2 – Crystal Structures in GaAs – Dopants and impurities in GaAs and InP – Brief Overview of GaAs Technology for High Speed – Epitaxial Techniques for GaAs High Speed Devices – MBE and LPE for GaAs Epitaxy – GaAs and InP Devices for Microelectronics – Metal Semiconductor contacts for MESFET – Ohmic Contacts on Semiconductors – Fermi Level Pinning & Schottky Barrier Diodes – Schottky Barrier Diodes

Causes of Non-Idealities-Schottky Barrier Diodes – MESFET Operation & I-V Characteristics – MESFET I-V Characteristics Shockley’s Model – MESFET Shockley’s Model and Velocity saturation – MESFET Velocity Saturation effect – MESFET Drain Current Saturation – MESFET : Effects of channel length and gate length on IDS and gm – MESFET: Effects of Velocity Saturation – Velocity Field Characteristics – MESFET-SAINT – SELF Aligned MESFET-SAINT – Hetero Junctions – High Electron Mobility Transistor – HEMT-off Voltage – HEMT 1-V Characteristics and Transconductance – Indium Phosphide Based HEMT – Pseudomorphic HEMT – Hetrojunction Bipolar Transistors(HBT) – Hetro Junctions and HEMT

Course Curriculum

Introduction to Basic Concepts Details 56:47
Requirements of High Speed Devices, Circuits & Mat Details 57:41
Classifications & Properties of Compound Semicond Details 57:16
Temary Compound Semiconductor and their Application Details 56:53
Temary Compound Semiconductor and their Appl – 2 Details 57:26
Crystal Structures in GaAs Details 57:16
Dopants and impurities in GaAs and InP Details 57:32
Brief Overview of GaAs Technology for High Speed Details 57:25
Epitaxial Techniques for GaAs High Speed Devices Details 57:10
MBE and LPE for GaAs Epitaxy Details 57:30
GaAs and InP Devices for Microelectronics Details 57:19
Metal Semiconductor contacts for MESFET Details 56:57
Metal Semiconductor contacts for MESFET (Contd.) Details 57:58
Metal Semiconductor contacts for MESFET (Contd.) Details 57:53
Ohmic Contacts on Semiconductors Details 57:48
Fermi Level Pinning & Schottky Barrier Diodes Details 57:13
Schottky Barrier Diode Details 57:25
Schottky Barrier Diodes Details 55:39
Causes of Non-Idealities-Schottky Barrier Diodes Details 57:18
MESFET Operation & I-V Characteristics Details 57:24
MESFET I-V Characteristics Shockley’s Model Details 56:15
MESFET Shockley’s Model and Velocity saturation Details 57:37
MESFET Velocity Saturation effect Details 57:14
MESFET Drain Current Saturation Details 57:10
MESFET : Effects of channel length and gate length on IDS and gm Details 57:28
MESFET: Effects of Velocity Saturation Details 57:37
Velocity Field Characteristics Details 56:53
MESFET-SAINT Details 57:21
SELF Aligned MESFET-SAINT Details 57:5
Hetero Junctions Details 56:30
Hetero Junctions&HEMT(Contd) Details 57:25
High Electron Mobility Transistor Details 56:39
HEMT-off Voltage Details 57:25
HEMT 1-V Characteristics and Transconductance Details 57:35
Indium Phosphide Based HEMT Details 57:32
Pseudomorphic HEMT Details 55:2
Hetrojunction Bipolar Transistors(HBT) Details 54:56
Hetrojunction Bipolar Transistors(HBT)-2(Contd) Details 56:41
Hetrojunction Bipolar Transistors(HBT)-3(Contd) Details 56:55
Hetrojunction Bipolar Transistors(HBT)-4(Contd) Details 56:9
Hetro Junctions and HEMT Details

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