High Speed Devices and Circuits

IIT Madras Course , Prof. K.N.Bhat

290 students enrolled

Overview

Introduction to Basic Concepts - Requirements of High Speed Devices, Circuits & Mat - Classifications & Properties of Compound Semicond - Temary Compound Semiconductor and their Application - Temary Compound Semiconductor and their Appl - 2 - Crystal Structures in GaAs - Dopants and impurities in GaAs and InP - Brief Overview of GaAs Technology for High Speed - Epitaxial Techniques for GaAs High Speed Devices - MBE and LPE for GaAs Epitaxy - GaAs and InP Devices for Microelectronics - Metal Semiconductor contacts for MESFET - Ohmic Contacts on Semiconductors - Fermi Level Pinning & Schottky Barrier Diodes - Schottky Barrier Diodes

Causes of Non-Idealities-Schottky Barrier Diodes - MESFET Operation & I-V Characteristics - MESFET I-V Characteristics Shockley's Model - MESFET Shockley's Model and Velocity saturation - MESFET Velocity Saturation effect - MESFET Drain Current Saturation - MESFET : Effects of channel length and gate length on IDS and gm - MESFET: Effects of Velocity Saturation - Velocity Field Characteristics - MESFET-SAINT - SELF Aligned MESFET-SAINT - Hetero Junctions - High Electron Mobility Transistor - HEMT-off Voltage - HEMT 1-V Characteristics and Transconductance - Indium Phosphide Based HEMT - Pseudomorphic HEMT - Hetrojunction Bipolar Transistors(HBT) - Hetro Junctions and HEMT

Lecture 1: Introduction to Basic Concepts

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        3.7 (21 Ratings)

        Lecture Details

        High Speed Devices and Circuits Introduction to Basic Concepts

        LECTURES



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        3.7

        21 Rates
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        62%
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        6

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        LECTURES