VLSI Devices : Modeling and Simulation

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2 STUDENTS

Capacitance Voltage characteristics , threshold voltage – Flat-Band voltage – Gate oxide charges, interface states, streching of C-V plots – Transport through gate oxide, MOSFET – Current-voltage relation of long-channel MOSFETs – Drain (output) conductance, transconductance, effect of drain-included channel depletion – Accurate model of drain current in saturation and body effect – Drift – Diffusion model, subthreshold conduction – Subthreshold slope, mobility model in MOSFETs – Temperature effect, eq circuit of MOSFET, threshold voltage control – Channel implantation, Substrate bias sensitivity – Scaling of MOSFETs, Short-channel effects – Charge sharing model – Narrow width effect, channel length modulation, hot carrier effects – MOSFET fabrication, self-aligned silicide technology., LDD MOSFET – VMOS, FAMOS, EEPROM – Oxide isolate CMOS, control of latch-up, Silicon On Insulator (SOI) – Charge Coupled Devices (CCD) – MESFET, Permeable base transistor – Advanced high-speed devices, MOSFET, Quantum devices – Evel odel of MOSFET : Mobility modelling, subthreshold current, channel length modulation,short channel effect, velocity saturation,narrow width effect, gate capacitance,junction capacitances,slope discontinuity, gate capacitances, BSIM model

Course Curriculum

Capacitance Voltage characteristics , threshold voltage Details 54:1
Flat-Band voltage Details 52:21
Gate oxide charges, interface states, streching of C-V plots Details 52:39
Transport through gate oxide, MOSFET Details 52:42
Current-voltage relation of long-channel MOSFETs Details 57:31
Drain (output) conductance, transconductance, effect of drain-included channel depletion Details 52:55
Accurate model of drain current in saturation and body effect Details 52:40
Drift – Diffusion model, subthreshold conduction Details 52:1
Subthreshold slope, mobility model in MOSFETs Details 44:20
Temperature effect, eq circuit of MOSFET, threshold voltage control Details 48:12
Channel implantation, Substrate bias sensitivity Details 54:4
Scaling of MOSFETs, Short-channel effects Details 53:36
Charge sharing model Details 52:16
Narrow width effect, channel length modulation, hot carrier effects Details 51:7
MOSFET fabrication, self-aligned silicide technology., LDD MOSFET Details 49:1
VMOS, FAMOS, EEPROM Details 49:1
Oxide isolate CMOS, control of latch-up, Silicon On Insulator (SOI) Details 54:2
Charge Coupled Devices (CCD) Details 51:14
MESFET, Permeable base transistor Details 53:13
Advanced high-speed devices, MOSFET, Quantum devices Details 54:16
Evel odel of MOSFET I Details 56:1
Evel odel of MOSFET II Details 52:49
Evel odel of MOSFET I ; mobility modelling, subthreshold current, channel length modulatio Details 52:23
Evel odel of MOSFET II ; short channel effect, velocity saturation Details 50:30
Evel odel of MOSFET (Part ; narrow width effect, gate capacitance Details 52:26
Evel odel of MOSFET IV ; junction capacitances Details 50:48
Evel odel of MOSFET ; slope discontinuity, gate capacitances, BSIM model Details 59:1

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