# VLSI Devices : Modeling and Simulation

Other, , Prof. S.K.Lahiri

Updated On 02 Feb, 19

Other, , Prof. S.K.Lahiri

Updated On 02 Feb, 19

Capacitance Voltage characteristics , threshold voltage - Flat-Band voltage - Gate oxide charges, interface states, streching of C-V plots - Transport through gate oxide, MOSFET - Current-voltage relation of long-channel MOSFETs - Drain (output) conductance, transconductance, effect of drain-included channel depletion - Accurate model of drain current in saturation and body effect - Drift - Diffusion model, subthreshold conduction - Subthreshold slope, mobility model in MOSFETs - Temperature effect, eq circuit of MOSFET, threshold voltage control - Channel implantation, Substrate bias sensitivity - Scaling of MOSFETs, Short-channel effects - Charge sharing model - Narrow width effect, channel length modulation, hot carrier effects - MOSFET fabrication, self-aligned silicide technology., LDD MOSFET - VMOS, FAMOS, EEPROM - Oxide isolate CMOS, control of latch-up, Silicon On Insulator (SOI) - Charge Coupled Devices (CCD) - MESFET, Permeable base transistor - Advanced high-speed devices, MOSFET, Quantum devices - Evel odel of MOSFET : Mobility modelling, subthreshold current, channel length modulation,short channel effect, velocity saturation,narrow width effect, gate capacitance,junction capacitances,slope discontinuity, gate capacitances, BSIM model

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4.1 ( 11 )

Video Lectures on "VLSI Devices and Model" by Prof. S.K. Lahiri sir, IIT KGP

1. Semiconductor Materials and Structures

2. Semiconductor Band Structures

3. Electron and holes Statistics

4. Carrier Mobility and Conductivity

5. Carrier diffusion, generationrecombination, high-field effect

6. Avalanche Multiplication, Hall Effect

7. p-n junction formation, built-in potential

8. Quasi Fermi levels, p-n electrostatics

9. Abrupt and linearly graded p-n junction depletion layers and capacitance

10. Current - Voltage relation in p-n junction - I

11. Current - Voltage relation in p-n junction - II

12. Generation recombination currents, diffusion capacitance

13. Diodes equivalent circuit, Breakdown voltage

14. Junction curvature effect, transient behaviour, noise

15. Tunnel diode, metal-semiconductor junctions

16. Schottky diodes, Ohmic contacts

17. Heterojunctions

18. Bipolar Junction Transistor, current-voltage relations

19. Current gain in BJT

20. Bandgap narrowing, Auger recombination, Early effect & punch-through in BJT

21. Breakdown voltage in BJT, small-signal equivalent circuit

22. Cut-off frequency of BJT, switching behaviour, HBT

23. HBT, SCR, JEFT

24. MOS devices classification, basic concepts of MOS field effect

25. Induced surface charge in MOS, accumulation, depletion & inversion layers

26. Capacitance-voltage characteristics, threshold voltage of MOS capacitor

27. Flat-Band voltage

28. Gate oxide charges, interface states, streching of CV plots

29. Transport through gate oxide, MOSFET

30. Current-voltage relation of long-channel MOSFETs

31. Drain conductance, transconductance, effect of drain-included channel depletion

32. Accurate model of drain current saturation, body effect

33. Drift-diffusion model, subthreshold conduction

34. Subthreshold slope, mobility model in MOSFETs

35. Temperature effect, eq circuit of MOSFET, threshold voltage control

36. Channel implantation, Substrate bias sensitivity

37. Scaling of MOSFETs, Short-channel effects

38. Charge sharing model

39. Narrow width effect, channel length modulation, hot carrier effects

40. MOSFET fabrication, self-aligned silicide technology., LDD MOSFET

41. VMOS, FAMOS, EEPROM

42. Oxide isolate CMOS, control of latch-up, SOI

43. Charge Coupled Devices (CCD)

44. MESFET, Permeable base transistor

45. Advanced high-speed devices, MODFET, Quantum devices

46. Level 1 model of MOSFET - I

47. Level 1 model of MOSFET - II

48. Level 2 model of MOSFET - I ; mobility modelling, subthreshold current, channel length modulation

49. Level 2 model of MOSFET - II ; short channel effect, velocity saturation

50. Level 2 model of MOSFET - III ; narrow width effect, gate capacitance

51. Level 2 model of MOSFET - IV ; junction capacitances

52. Level 3 model of MOSFET ; slope discontinuity, gate capacitances, BSIM model

53. BJT models Basic Ebers-Moll model, basic Gummel-Poon model

54. Model derivation

55. Moll-Ross equation, high injection effect

Sam

Sep 12, 2018

Excellent course helped me understand topic that i couldn't while attendinfg my college.

Dembe

March 29, 2019

Great course. Thank you very much.