# VLSI Devices : Modeling and Simulation

Other, , Prof. S.K.Lahiri

Other, , Prof. S.K.Lahiri

Capacitance Voltage characteristics , threshold voltage - Flat-Band voltage - Gate oxide charges, interface states, streching of C-V plots - Transport through gate oxide, MOSFET - Current-voltage relation of long-channel MOSFETs - Drain (output) conductance, transconductance, effect of drain-included channel depletion - Accurate model of drain current in saturation and body effect - Drift - Diffusion model, subthreshold conduction - Subthreshold slope, mobility model in MOSFETs - Temperature effect, eq circuit of MOSFET, threshold voltage control - Channel implantation, Substrate bias sensitivity - Scaling of MOSFETs, Short-channel effects - Charge sharing model - Narrow width effect, channel length modulation, hot carrier effects - MOSFET fabrication, self-aligned silicide technology., LDD MOSFET - VMOS, FAMOS, EEPROM - Oxide isolate CMOS, control of latch-up, Silicon On Insulator (SOI) - Charge Coupled Devices (CCD) - MESFET, Permeable base transistor - Advanced high-speed devices, MOSFET, Quantum devices - Evel odel of MOSFET : Mobility modelling, subthreshold current, channel length modulation,short channel effect, velocity saturation,narrow width effect, gate capacitance,junction capacitances,slope discontinuity, gate capacitances, BSIM model

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4.1 ( 11 )

Video Lectures on "VLSI Devices and Model" by Prof. S.K. Lahiri sir, IIT KGP 1. Semiconductor Materials and Structures 2. Semiconductor Band Structures 3. Electron and holes Statistics 4. Carrier Mobility and Conductivity 5. Carrier diffusion, generationrecombination, high-field effect 6. Avalanche Multiplication, Hall Effect 7. p-n junction formation, built-in potential 8. Quasi Fermi levels, p-n electrostatics 9. Abrupt and linearly graded p-n junction depletion layers and capacitance 10. Current - Voltage relation in p-n junction - I 11. Current - Voltage relation in p-n junction - II 12. Generation recombination currents, diffusion capacitance 13. Diodes equivalent circuit, Breakdown voltage 14. Junction curvature effect, transient behaviour, noise 15. Tunnel diode, metal-semiconductor junctions 16. Schottky diodes, Ohmic contacts 17. Heterojunctions 18. Bipolar Junction Transistor, current-voltage relations 19. Current gain in BJT 20. Bandgap narrowing, Auger recombination, Early effect & punch-through in BJT 21. Breakdown voltage in BJT, small-signal equivalent circuit 22. Cut-off frequency of BJT, switching behaviour, HBT 23. HBT, SCR, JEFT 24. MOS devices classification, basic concepts of MOS field effect 25. Induced surface charge in MOS, accumulation, depletion & inversion layers 26. Capacitance-voltage characteristics, threshold voltage of MOS capacitor 27. Flat-Band voltage 28. Gate oxide charges, interface states, streching of CV plots 29. Transport through gate oxide, MOSFET 30. Current-voltage relation of long-channel MOSFETs 31. Drain conductance, transconductance, effect of drain-included channel depletion 32. Accurate model of drain current saturation, body effect 33. Drift-diffusion model, subthreshold conduction 34. Subthreshold slope, mobility model in MOSFETs 35. Temperature effect, eq circuit of MOSFET, threshold voltage control 36. Channel implantation, Substrate bias sensitivity 37. Scaling of MOSFETs, Short-channel effects 38. Charge sharing model 39. Narrow width effect, channel length modulation, hot carrier effects 40. MOSFET fabrication, self-aligned silicide technology., LDD MOSFET 41. VMOS, FAMOS, EEPROM 42. Oxide isolate CMOS, control of latch-up, SOI 43. Charge Coupled Devices (CCD) 44. MESFET, Permeable base transistor 45. Advanced high-speed devices, MODFET, Quantum devices 46. Level 1 model of MOSFET - I 47. Level 1 model of MOSFET - II 48. Level 2 model of MOSFET - I ; mobility modelling, subthreshold current, channel length modulation 49. Level 2 model of MOSFET - II ; short channel effect, velocity saturation 50. Level 2 model of MOSFET - III ; narrow width effect, gate capacitance 51. Level 2 model of MOSFET - IV ; junction capacitances 52. Level 3 model of MOSFET ; slope discontinuity, gate capacitances, BSIM model 53. BJT models Basic Ebers-Moll model, basic Gummel-Poon model 54. Model derivation 55. Moll-Ross equation, high injection effect

Sam

Sep 12, 2018

Excellent course helped me understand topic that i couldn't while attendinfg my college.

Dembe

March 29, 2019

Great course. Thank you very much.